Details

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BUY 2SD1288 https://www.utsource.net/itm/p/4052576.html
PNP SILICON EPITAXIAL/NPN TRIPLE DIFFUSED TRANSISTOR

Parameter	Symbol	Value	Unit	Conditions
Collector-Emitter Breakdown Voltage	V(BR)CEO	80	V	IC = 10mA, IE = 0
Emitter-Base Breakdown Voltage	V(BR)EBO	5	V	IC = 0, IB = 5mA
Collector Current	IC	3	A	VCE = 20V
Continuous Total Dissipation	PD	62.5	W	TC = 25掳C
Junction Temperature Range	TJ	-55 to 150	掳C
Storage Temperature Range	TSTG	-55 to 150	掳C
Transition Frequency	FT	400	MHz	IC = 150mA, VCE = 10V

Instructions for Use:

1. Handling Precautions: The 2SD1288 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate anti-static precautions.

2. Mounting: Ensure proper heat sinking when operating at high power levels to maintain the junction temperature within specified limits.

3. Biasing: Carefully set biasing conditions to avoid exceeding the maximum ratings for collector-emitter voltage and collector current.

4. Operating Environment: Operate within the specified temperature ranges to ensure reliable performance and longevity.

5. Testing: When testing or measuring parameters, adhere to the conditions specified in the parameter table to obtain accurate results.

6. Storage: Store in a dry, cool place within the storage temperature range to prevent damage.

7. Soldering: If soldering is required, do not exceed temperatures that could cause thermal shock or damage to the device.

(For reference only)