Details

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BUY 2STN1550 https://www.utsource.net/itm/p/4055217.html
Low voltage fast-switching NPN power bipolar transistors

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO				40	V
Collector-Base Voltage	VCBO				50	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				1.5	A
Base Current	IB				0.15	A
Power Dissipation	PD	Tc = 25掳C			65	W
Junction Temperature	TJ		-55		150	掳C
Storage Temperature	TSTG		-65		150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Ensure the device is mounted on a heatsink if operating near maximum power dissipation to maintain junction temperature within specified limits.
   • Handle with care to avoid damage to leads and body.

2. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly according to your circuit design.
   • Ensure that voltage and current ratings are not exceeded during operation.

3. Operating Environment:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Protect against moisture and corrosive environments which can degrade performance.

4. Testing:

   • Before full-scale application, test the device under actual operating conditions to verify its performance.
   • Check all parameters periodically to ensure they remain within specification.

5. Storage:

   • Store in a dry place away from direct sunlight and extreme temperatures.
   • Follow anti-static precautions to prevent damage to the device.

(For reference only)