Details

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BUY 2PC1815GR https://www.utsource.net/itm/p/4072666.html
general purpose transistor

Parameter	Description	Value	Unit
Device Type	Description of the device	NPN Transistor	-
Collector-Emitter Voltage (VCEO)	Maximum voltage between collector and emitter	50	V
Emitter-Base Voltage (VEBO)	Maximum voltage between emitter and base	6	V
Collector-Emitter Saturation Voltage (VCE(sat))	Typical saturation voltage at specified conditions	0.2	V
Continuous Collector Current (IC)	Maximum continuous current through the collector	500	mA
DC Current Gain (hFE)	Minimum guaranteed gain	100 to 300	-
Power Dissipation (PD)	Maximum power dissipation at T_A = 25掳C	625	mW
Operating Temperature Range (T_op)	Temperature range for operation	-55 to 150	掳C
Storage Temperature Range (T_stg)	Temperature range for storage	-65 to 150	掳C

Instructions:

1. Handling: Use appropriate anti-static precautions when handling the 2PC1815GR to prevent damage from electrostatic discharge.
2. Mounting: Ensure that the mounting method does not exceed the maximum ratings, particularly thermal resistance considerations.
3. Biasing: When designing circuits, ensure the biasing network keeps the transistor within its safe operating area (SOA).
4. Heat Dissipation: For applications where the transistor will dissipate significant power, consider using a heat sink to maintain junction temperature within limits.
5. Testing: Verify all connections and parameters before applying power to avoid damage to the component or circuitry.

(For reference only)