Details

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BUY AOT4N60 https://www.utsource.net/itm/p/4146642.html
600V, 4A N-Channel MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Breakdown Voltage	V(BR)DSS	-	600	-	V	Drain-Source Off
Continuous Drain Current	ID	-	4.0	-	A	TC = 25掳C
Pulse Drain Current	IGM	-	16	-	A	tp = 10 渭s, Duty Cycle = 1%
Gate Threshold Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 250 渭A
On-State Resistance	RDS(on)	0.8	-	1.2	惟	VGS = 10V, ID = 4.0A
Input Capacitance	Ciss	-	1600	-	pF	VGS = 0V
Output Capacitance	Coss	-	390	-	pF	VDS = V(BR)DSS/2
Reverse Transfer Capacitance	Crss	-	370	-	pF	VDS = V(BR)DSS/2, VGS = 0V
Total Gate Charge	Qg	-	50	-	nC	VGS = 卤15V, VDS = V(BR)DSS/2

Instructions for Use:

1. Operating Conditions: Ensure that the operating conditions do not exceed the maximum ratings provided in the table.
2. Heat Dissipation: Proper heat sinking is necessary to maintain the device within safe operating temperatures, especially when operating at or near the maximum continuous drain current.
3. Gate Drive: Apply a gate voltage within the specified range to ensure reliable switching. Exceeding the gate threshold voltage can cause excessive on-state resistance.
4. Pulse Operation: For pulse applications, verify that the pulse width and duty cycle are within the limits specified for pulse drain current.
5. Capacitance Considerations: The capacitance values affect the switching speed and should be considered when designing the drive circuitry.
6. Storage Temperature: Store the device in a dry environment and handle with care to prevent damage from electrostatic discharge (ESD).

For detailed application notes and further information, refer to the manufacturer's datasheet or technical documentation.

(For reference only)