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256K 32K x 8 Paged CMOS E2PROM
Parameter | Description | Value |
---|---|---|
Device Type | EEPROM | 256K Bit |
Organization | 32K x 8 | |
Supply Voltage (Vcc) | Operating Voltage Range | 4.5V to 5.5V |
Access Time (tAA) | Access Time | 150ns (max) |
Endurance | Write/Erase Cycle Endurance | 1,000,000 cycles |
Data Retention | Data Retention Period | 10 years |
Operating Temperature | Industrial Temperature Range | -40°C to +85°C |
Package Type | Plastic DIP, SOIC | 28-pin |
Write Cycle Time | Minimum Time Between Write Cycles | 5ms |
Write Pulse Width | Programming Pulse Width | 1μs (min) |
Standby Current | Supply Current in Standby Mode | 50μA (max) |
Active Current | Supply Current During Active Operation | 25mA (max) |
Instructions for Use:
Power Supply: Ensure the supply voltage is within the specified range of 4.5V to 5.5V to prevent damage or unreliable operation.
Addressing and Data Lines: Connect the address lines (A0-A14) to the appropriate address decoder or microcontroller ports. Similarly, connect the data lines (D0-D7) for reading from and writing to the EEPROM.
Write Operations: Before initiating a write cycle, ensure that at least 5ms has passed since the last write cycle. Each byte can be written individually by applying the correct address and data lines and activating the write enable (WE) pin.
Read Operations: To read data, apply the desired address to the address lines and activate the output enable (OE) pin. The data will appear on the data lines after the access time.
Chip Select (CS): Ensure that the chip select pin is activated (low) during both read and write operations. If CS is high, the device remains in standby mode.
Temperature Considerations: Operate the device within the industrial temperature range of -40°C to +85°C to maintain reliable performance and longevity.
Endurance and Data Retention: Be mindful of the write/erase cycle endurance limit of 1,000,000 cycles and ensure data retention requirements are met within the 10-year period.
Handling Precautions: Handle the device with care to avoid static damage. Follow proper ESD handling procedures during installation and testing.
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