Details
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Low-voltage variable capacitance double diode
| Parameter | Description |
|---|---|
| Part Number | BB201 |
| Type | Bipolar Junction Transistor (BJT) |
| Polarity | NPN |
| Collector-Emitter Voltage (Vce) | 30 V |
| Emitter-Base Voltage (Veb) | 5 V |
| Collector Current (Ic) | 1 A |
| Power Dissipation (Ptot) | 625 mW at 25掳C |
| Transition Frequency (ft) | 300 MHz |
| Storage Temperature Range | -65掳C to +150掳C |
| Operating Temperature Range | -65掳C to +150掳C |
| Package Type | TO-92 |
Instructions:
- Handling Precautions: The BB201 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
- Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation limits.
- Soldering: Do not exceed soldering temperatures of 260掳C for more than 10 seconds. Allow adequate cooling between soldering operations.
- Biasing: Proper biasing of the base-emitter junction is essential for stable operation. Refer to application notes for detailed biasing circuits.
- Testing: When testing, ensure that all voltage and current ratings are adhered to prevent damage to the transistor.
- Storage: Store in original packaging in a dry, cool place away from direct sunlight.
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