Details

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BUY BF1105R https://www.utsource.net/itm/p/4274290.html
N-channel dual-gate MOS-FETs

Parameter	Description	Value	Unit
Part Number	BF1105R
Type	Silicon Controlled Rectifier (SCR)
Maximum Repetitive Peak Off-State Voltage (VDRM)	Peak inverse voltage	1100	V
Maximum On-State Current (IT(RMS))	RMS on-state current	5	A
Maximum Gate Trigger Current (IG(T))	Gate trigger current	0.5	mA
Maximum Gate Trigger Voltage (VG(T))	Gate trigger voltage	1.5	V
Junction Temperature (TJ)	Operating temperature	-40 to +125	掳C
Storage Temperature (TSTG)	Storage temperature	-55 to +150	掳C

Instructions for Use:

1. Installation:

   • Ensure the BF1105R is installed in a well-ventilated area to prevent overheating.
   • Follow proper mounting guidelines to ensure good thermal contact and mechanical stability.

2. Handling:

   • Handle with care to avoid damage to the SCR terminals.
   • Avoid exposure to excessive static electricity which can damage sensitive components.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the parameter table.
   • Operate within specified junction temperature limits to ensure reliable performance.

4. Testing:

   • Use appropriate test equipment to verify the SCR's functionality before installation.
   • Perform regular maintenance checks to ensure continued reliability.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive substances.
   • Keep in original packaging until ready for use to protect against physical damage.

6. Safety:

   • Always disconnect power and discharge capacitors before servicing circuits containing the BF1105R.
   • Follow all safety guidelines provided by the manufacturer and local regulations.

(For reference only)