Details

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BUY BSC0909NS https://www.utsource.net/itm/p/4297039.html
n-Channel Power MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-10		30	V
Gate-Source Voltage	VGS	-5		5	V
Continuous Drain Current	ID		9		A	TC = 25掳C
Pulse Drain Current	IDM		28		A	tp = 10 渭s, TC = 25掳C
Power Dissipation	PD			64	W	TC = 25掳C
Junction Temperature	Tj	-55		175	掳C
Storage Temperature	Tstg	-55		150	掳C
Thermal Resistance	R胃JC		0.5		掳C/W	Junction to Case

Instructions for BSC0909NS:

1. Handling Precautions: The device is sensitive to static electricity; use proper ESD protection during handling.
2. Mounting: Ensure the mounting surface is flat and clean to ensure good thermal contact.
3. Heat Sinking: For applications where the device will operate at high current or power levels, use an appropriate heat sink to maintain junction temperature within limits.
4. Biasing: Apply gate-source voltage (VGS) carefully to avoid exceeding the maximum ratings. Typically, a VGS of 10V is used for full enhancement.
5. Pulse Operation: When operating in pulse mode, ensure that pulse width and frequency do not exceed safe operating area (SOA) limits.
6. Storage: Store in a dry environment and observe the storage temperature range to prevent damage.
7. Testing: Before final assembly, test the device parameters to ensure they meet the specified values.

For detailed application notes and more specific guidelines, refer to the manufacturer's datasheet.

(For reference only)