Details

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BUY CSD17307Q5A https://www.utsource.net/itm/p/4348584.html
30V, N-Channel NexFET? Power MOSFETs

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 4.5V, ID = 12A	-	3.0	-	m惟
Gate Charge	QG	-	-	18	-	nC
Input Capacitance	Ciss	-	-	690	-	pF
Output Capacitance	Coss	-	-	170	-	pF
Total Capacitance	Crss	-	-	520	-	pF
Continuous Drain Current	ID	Tc = 25掳C	-	-	44	A
Pulse Drain Current	IDM	Pulse Width Limited	-	-	100	A
Power Dissipation	PD	TC = 70掳C	-	-	1.6	W
Junction Temperature	TJ	-	-25	-	175	掳C
Storage Temperature	TSTG	-	-65	-	150	掳C

Instructions for Use:

1. Mounting and Handling:

   • Handle the device with care to avoid damage to leads and body.
   • Follow proper surface mount technology (SMT) procedures for mounting.

2. Electrical Connections:

   • Ensure correct orientation of the device during installation.
   • Verify all connections are secure and meet electrical specifications.

3. Thermal Considerations:

   • Ensure adequate heat sinking if operating near maximum current or power dissipation limits.
   • Monitor junction temperature to prevent overheating.

4. Operating Conditions:

   • Do not exceed the maximum ratings provided in the table.
   • Operate within specified gate-source voltage and drain-source voltage limits.

5. Storage and Environment:

   • Store in a dry environment to prevent moisture ingress.
   • Avoid exposure to corrosive substances or environments.

6. Testing:

   • Perform initial testing under controlled conditions to validate performance parameters.
   • Regularly inspect for signs of wear or damage.

For detailed application notes and further information, refer to the manufacturer's datasheet.

(For reference only)