Details

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BUY FDP054N10 https://www.utsource.net/itm/p/4444363.html
N-Channel PowerTrench? MOSFET 100V, 144A, 5.5m惟

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDS				100	V
Gate-Source Voltage	VGS		-20		20	V
Continuous Drain Current	IDS	TC = 25掳C		5.4		A
		TC = 70掳C		3.8		A
Pulse Drain Current	IDP	tp = 10 渭s, Repetition Rate 1%		27		A
RDS(on)		VGS = 10V, ID = 5.4A	12			m惟
Input Capacitance	Ciss	VGS = 0V		1900		pF
Output Capacitance	Coss	VDS = 10V		60		pF
Reverse Transfer Capacitance	Crss	VDS = 10V, VGS = 0V		160		pF
Gate Charge	Qg	VGS = 10V		22		nC
Threshold Voltage	Vth	ID = 250 渭A	1.5	2.5	4	V

Instructions for FDP054N10:

1. Handling Precautions:

   • The device is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.

2. Mounting Guidelines:

   • Ensure good thermal contact between the device and the heatsink or PCB to manage heat dissipation effectively.

3. Operating Conditions:

   • Operate within specified voltage and current limits to avoid damage or degradation of performance.

4. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.

5. Testing:

   • When testing the device, ensure that all voltages and currents are within the specified limits to prevent damage.

6. Application Considerations:

   • For optimal performance, design circuits to minimize parasitic inductances and capacitances around the device.
   • Use appropriate gate drive circuits to ensure reliable switching operation.

(For reference only)