Details

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BUY FCPF7N60 https://www.utsource.net/itm/p/4448896.html
600V N-Channel MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDSS	-	-	600	V	Maximum drain-source voltage
Gate-Source Voltage	VGS	-15	-	15	V	Maximum gate-source voltage
Continuous Drain Current	ID	-	7	-	A	Continuous drain current at TC = 25掳C
Pulse Drain Current	IDM	-	49	-	A	Pulse drain current (t = 10 渭s)
Total Device Dissipation	PD	-	-	230	W	Maximum power dissipation
Junction Temperature	TJ	-55	-	175	掳C	Operating junction temperature
Storage Temperature	TSTG	-55	-	150	掳C	Storage temperature range
Thermal Resistance, Junction to Case	R胃JC	-	0.48	-	掳C/W	Thermal resistance, junction to case

Instructions for FCPF7N60

1. Handling and Storage:

   • Store the device in a dry place away from direct sunlight.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking when operating at high power levels to maintain junction temperature within limits.
   • Use appropriate mounting hardware to secure the device.

3. Electrical Connections:

   • Connect the gate to a low impedance source to minimize noise and ensure stable operation.
   • Ensure all connections are secure and free of corrosion.

4. Operation:

   • Do not exceed the maximum ratings specified in the table.
   • Operate within the recommended operating conditions to ensure reliability and longevity.

5. Testing:

   • When testing the device, use caution to avoid exceeding the maximum ratings, especially during pulse tests.
   • Use protective equipment and follow safety guidelines when working with high voltages.

6. Disposal:

   • Dispose of the device according to local regulations for electronic components.

For detailed specifications and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)