Details

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BUY FQPF6N60 https://www.utsource.net/itm/p/4454316.html
600V N-Channel MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS			600	V
Gate-Source Voltage	VGS			卤20	V
Continuous Drain Current	ID		6.0		A	TC = 25掳C
Pulse Drain Current	IDM		18		A	t = 10 渭s, IGBT = off
Total Power Dissipation	PD		140		W	TC = 25掳C
Junction Temperature	Tj	-55		150	掳C
Storage Temperature	Tstg	-55		150	掳C
Gate Charge	Qg		37		nC	VDS = 400 V, ID = 1.5 A
Input Capacitance	Ciss		1290		pF	VDS = 400 V
Output Capacitance	Coss		250		pF	VDS = 400 V
Reverse Transfer Capacitance	Crss		110		pF	VDS = 400 V
Turn-on Delay Time	td(on)		28		ns	VGS = 10 V, ID = 6 A
Rise Time	tr		42		ns	VGS = 10 V, ID = 6 A
Turn-off Delay Time	td(off)		25		ns	VGS = 0 V, ID = 6 A
Fall Time	tf		50		ns	VGS = 0 V, ID = 6 A

Instructions for Use:

1. Handling Precautions: The FQPF6N60 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
2. Mounting: Ensure the device is mounted on a suitable heatsink if operating at high power levels to maintain junction temperature within specified limits.
3. Gate Drive: Use appropriate gate drive circuits to ensure reliable switching performance. Avoid exceeding the maximum gate-source voltage.
4. Pulse Operation: For pulse operation, ensure that the pulse width and frequency do not exceed the safe operating area of the device.
5. Storage and Operating Temperature: Store and operate the device within the specified temperature ranges to avoid damage or reduced performance.
6. Capacitance Considerations: Account for input, output, and reverse transfer capacitances in circuit design to optimize performance.
7. Switching Characteristics: Utilize the provided turn-on and turn-off delay times, rise and fall times to design efficient switching circuits.

(For reference only)