Details

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BUY FGH40N65UFD https://www.utsource.net/itm/p/4462901.html
650V, 40A Field Stop IGBT

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCES	-	-	650	V
Collector Current	IC	-	-	40	A	TC = 25掳C
Power Dissipation	PD	-	-	280	W	TC = 25掳C
Junction Temperature	Tj	-	-	175	掳C
Storage Temperature	Tstg	-55	-	175	掳C
Gate Charge	QG	-	95	-	nC	VGE = 15V
Turn-off Time	t(off)	-	95	-	ns	IC = 20A
Turn-on Time	t(on)	-	75	-	ns	IC = 20A

Instructions for FGH40N65UFD:

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified storage temperature range (-55掳C to 175掳C).
   • Handle with care to prevent damage from electrostatic discharge (ESD).

2. Mounting and Assembly:

   • Ensure proper heat sinking if operating near maximum power dissipation limits.
   • Follow manufacturer guidelines for soldering profiles to avoid thermal shock.

3. Operating Guidelines:

   • Do not exceed the maximum collector-emitter voltage (VCES) of 650V.
   • Keep the junction temperature within the specified limit of 175掳C to ensure reliable operation.
   • Monitor the collector current (IC) to stay within the 40A limit, especially under continuous operation.

4. Testing and Validation:

   • Verify gate charge (QG) and switching times (t(on), t(off)) under actual operating conditions to ensure performance meets application requirements.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive environments.

Note: Always refer to the latest datasheet from the manufacturer for detailed specifications and updates.

(For reference only)