Details

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BUY FDS5351 https://www.utsource.net/itm/p/4467019.html
N-Channel PowerTrench? MOSFET 60V, 6.1A, 35mΩ

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 2A	-	0.05	-	Ω
Gate Threshold Voltage	VGS(th)	ID = 250μA	1.0	-	2.5	V
Continuous Drain Current	ID	TC = 25°C	-	4.5	-	A
Power Dissipation	PD	TC = 25°C	-	360	-	mW
Total Gate Charge	QG	VDS = 10V, ID = 2A	-	15	-	nC
Input Capacitance	Ciss	VDS = 10V	-	120	-	pF

Instructions for Use:

1. Handling Precautions:

   • The FDS5351 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.

2. Mounting:

   • Ensure that the component is mounted on a PCB with adequate thermal management if operating near its maximum current or power ratings.

3. Biasing:

   • Apply gate-source voltage (VGS) within specified limits to avoid damaging the device.
   • Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly for efficient switching.

4. Operating Temperature:

   • Operate the device within the recommended temperature range to ensure reliable performance and longevity.

5. Storage:

   • Store in a dry environment away from direct sunlight and sources of heat.

6. Testing:

   • When testing the device, adhere to the test conditions provided in the parameter table to obtain accurate measurements.

7. Application Notes:

   • Refer to the manufacturer’s application notes for detailed information on optimal circuit design and troubleshooting tips.

(For reference only)