Details

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BUY FZT751QTA https://www.utsource.net/itm/p/4474498.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V(BR)CEO	-	30	-	V	IC = 500mA, IB = 0
Emitter-Base Voltage	V(BR)EBO	-	5	-	V	IE = 5mA
Collector Current	IC	-	500	-	mA	VCE = 30V
Base Current	IB	-	50	-	mA	VCE = 30V, IC = 500mA
Power Dissipation	PD	-	625	-	mW	Tc = 25掳C
Forward Current Transfer Ratio	hFE	100	400	700	-	IC = 150mA, VCE = 5V
Storage Temperature Range	TJ	-55	-	150	掳C	-
Operating Temperature Range	TAMB	-40	-	85	掳C	-

Instructions for FZT751QTA

1. Handling and Storage:

   • Store in a dry environment to avoid moisture damage.
   • Handle with care to prevent static damage; use anti-static precautions.

2. Mounting:

   • Ensure proper heat dissipation if operating near the maximum power dissipation.
   • Follow manufacturer guidelines for PCB layout and mounting techniques to ensure optimal performance.

3. Electrical Connections:

   • Verify correct polarity before connecting the transistor.
   • Use appropriate current limiting resistors on the base to prevent exceeding the maximum base current.

4. Operation:

   • Do not exceed the specified maximum ratings to avoid damage or reduced lifespan.
   • Operate within the recommended temperature range to ensure reliable performance.

5. Testing:

   • Test the device under controlled conditions following the typical application circuits provided in the datasheet.
   • Ensure that all parameters are within the specified limits during testing.

(For reference only)