Details
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HY628100ALLG-55 - PDF
| Parameter | Description |
|---|---|
| Device Type | SRAM (Static Random Access Memory) |
| Manufacturer | Hyundai Electronics |
| Part Number | HY628100ALLG-55 |
| Package Type | SOP (Small Outline Package) |
| Pin Count | 28 |
| Memory Size | 1 Mbit |
| Organization | 128K x 8 bits |
| Supply Voltage | 5V |
| Access Time | 55 ns |
| Data Retention | 10 years at 85掳C |
| Operating Temp. | -40掳C to +85掳C |
| Storage Temp. | -65掳C to +150掳C |
Instructions for Use
- Power Supply: Ensure the supply voltage is within the specified range of 5V.
- Installation: Mount the component on a PCB ensuring proper alignment of the pins with the board's pads.
- Signal Integrity: Maintain signal integrity by using short traces for clock and data lines to minimize noise and reflections.
- Temperature Management: Operate the device within the temperature range of -40掳C to +85掳C for optimal performance.
- Handling Precautions: Handle the device with care to avoid electrostatic discharge (ESD); use ESD-safe tools and workstations.
- Testing: After installation, test the memory to ensure all addresses are accessible and data can be reliably written and read.
- Storage: Store the device in a controlled environment within the storage temperature range of -65掳C to +150掳C when not in use.
For detailed specifications and advanced usage, refer to the datasheet provided by Hyundai Electronics.
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