Details

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BUY HY6116P-10 https://www.utsource.net/itm/p/4527722.html

Parameter	Description	Value
Part Number	HY6116P-10
Type	CMOS Static RAM
Organization	16K x 8 bits
Supply Voltage	VCC	2.7V to 5.5V
Operating Current	ICC (Typical @ VCC=5V)	3.0mA
Standby Current	ISB (Typical @ VCC=5V)	20渭A
Access Time	tAA (Maximum @ VCC=5V)	70ns
Data Retention	Minimum	10 years
Package	SOP44
Temperature Range	Industrial (-40掳C to +85掳C)

Instructions for Use:

1. Power Supply Requirements:

   • Ensure the supply voltage (VCC) is within the range of 2.7V to 5.5V.
   • Proper decoupling capacitors should be placed close to the power pins to minimize noise and provide stable operation.

2. Signal Levels:

   • All input signals must comply with standard CMOS levels relative to VCC.
   • Output signals will also follow CMOS levels.

3. Handling Precautions:

   • The device is sensitive to electrostatic discharge (ESD); handle with appropriate ESD precautions.
   • Avoid exposing the device to excessive heat or mechanical stress during soldering or handling.

4. Memory Operations:

   • Write cycles are completed when the Write Enable (WE) signal goes low.
   • Read operations occur when the Output Enable (OE) signal is low and WE is high.

5. Storage Conditions:

   • Store in a dry, cool place away from direct sunlight.
   • Observe the data retention period to ensure reliable memory function over time.

6. Mounting Orientation:

   • Mount the device according to the manufacturer's guidelines to ensure proper heat dissipation and mechanical stability.

For detailed specifications and additional information, refer to the official datasheet provided by the manufacturer.

(For reference only)