Details

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BUY IPB80N08S2-07 https://www.utsource.net/itm/p/4540227.html
OptiMOS Power-Transisto

Parameter	Symbol	Value	Unit	Conditions
Maximum Drain Voltage	VDSS	80	V
Maximum Gate-Source Voltage	VGS	卤20	V
Maximum Continuous Drain Current	ID	4.5	A	Tc = 25掳C
Maximum Pulse Drain Current	IGM	13.5	A	Tc = 25掳C, tp = 10 ms
Power Dissipation	PD	260	mW	Tc = 25掳C
Junction Temperature	TJ	-55 to +175	掳C
Storage Temperature	TSTG	-55 to +175	掳C
Total Device Dissipation	PTOT	260	mW	Ta = 25掳C

Instructions for Use:

1. Handling Precautions: The IPB80N08S2-07 is sensitive to ESD (Electrostatic Discharge). Use proper ESD protection measures during handling and installation.
2. Mounting: Ensure the device is mounted on a suitable heatsink if operating at high currents or power levels to maintain junction temperature within specified limits.
3. Voltage and Current Ratings: Do not exceed the maximum ratings for drain-source voltage (VDSS), gate-source voltage (VGS), and continuous or pulse drain current (ID, IGM) to avoid damage.
4. Operating Temperature: Monitor the junction temperature (TJ) and ensure it remains within the specified range (-55掳C to +175掳C) for reliable operation.
5. Gate Drive Requirements: Apply gate drive signals within the recommended voltage range to ensure optimal switching performance and prevent gate oxide damage.
6. Storage: Store in a dry environment within the storage temperature range (-55掳C to +175掳C) to prevent moisture damage and maintain component integrity.

(For reference only)