Details
BUY IDT71V016SA10PHG https://www.utsource.net/itm/p/4541778.html
SRAM 1MBIT 10NS 44TSOP
| Parameter | Description | Value/Range | Unit |
|---|---|---|---|
| Device Type | High-Speed CMOS Static RAM | - | - |
| Organization | 16K x 8 | - | - |
| Supply Voltage (Vcc) | Operating voltage | 2.5 to 3.6 | V |
| Access Time (tAA) | Access time from address valid to data valid | 10 | ns |
| Data Setup Time (tDS) | Minimum data setup time before write pulse | 4 | ns |
| Data Hold Time (tDH) | Minimum data hold time after write pulse | 2 | ns |
| Output Enable Delay (tOE) | Delay time for output enable to output valid | 4 | ns |
| Write Cycle Time (tWC) | Minimum cycle time for write operation | 15 | ns |
| Power Dissipation | Typical power dissipation | 20 | mW |
| Operating Temperature | Range of operating temperature | -40 to +85 | 掳C |
| Package Type | Packaging type | TSSOP-20 | - |
Instructions for Use:
Power Supply Connection: Connect the supply voltage (Vcc) between 2.5V and 3.6V to the Vcc pin and ensure a stable ground connection to the GND pin.
Addressing: Apply the desired address to the address lines (A0-A13). Ensure that the address is stable during read/write operations.
Data Input/Output: Data lines (DQ0-DQ7) are used for both input and output. During a write operation, present the data on these lines before the write pulse. For read operations, the data will appear on these lines after the access time.
Write Operation: To perform a write, set the Write Enable (WE) low while providing the address and data. Maintain the WE signal low for at least the minimum write cycle time (tWC).
Read Operation: For a read, set the Output Enable (OE) low with the address stable. The data will be available on the data lines after the specified access time (tAA).
Chip Enable (CE): The device operates when CE is low. When high, the device enters standby mode, reducing power consumption.
Temperature Considerations: Ensure that the device operates within the specified temperature range (-40掳C to +85掳C) to maintain reliable performance.
Handling Precautions: Handle the device carefully to avoid damage from electrostatic discharge (ESD). Follow proper ESD handling procedures.
Storage Conditions: Store in a dry environment to prevent moisture damage.
This table and instructions provide essential information for integrating the IDT71V016SA10PHG into your design.
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