Details

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BUY IS41LV16256B-35KL https://www.utsource.net/itm/p/4549259.html
x 16 ( 4-MBIT ) DYNAMIC RAM WITH EDO PAGE MODE

Parameter	Description	Value	Unit
Device Type	Synchronous DRAM (SDRAM)	IS41LV16256B-35KL	-
Memory Organization	Organization	16M x 16	bits
Supply Voltage	Operating voltage range	2.5V 卤 0.2V	V
Access Time	Random access time	35	ns
Cycle Time	Minimum cycle time	35	ns
Data Width	Data bus width	16	bits
Operating Temperature	Industrial temperature range	-40 to +85	掳C
Package Type	Packaging type	BGA	-
Pins	Number of pins	66	-
Refresh Rate	Refresh cycles per second	8K	cycles

Instructions for Use

1. Power Supply:

   • Ensure the supply voltage is within the specified range of 2.3V to 2.7V.

2. Clock Signal:

   • Provide a stable clock signal to the device for synchronous operations.

3. Initialization:

   • After power-up, initialize the SDRAM by issuing reset commands as specified in the datasheet.

4. Memory Operations:

   • Use the provided control signals (e.g., Chip Select, Row Address Strobe, Column Address Strobe) to perform read and write operations.
   • Ensure all address lines are correctly set before initiating memory access.

5. Refresh Management:

   • Implement an 8K refresh cycle to maintain data integrity. Each row must be refreshed within the refresh period.

6. Signal Integrity:

   • Maintain proper signal integrity on all control and data lines to prevent errors.

7. Thermal Management:

   • Operate the device within the specified temperature range (-40掳C to +85掳C) to ensure reliable operation.

8. Handling:

   • Handle the device with care to avoid damage to the pins and package. Follow ESD precautions during handling and installation.

(For reference only)