Details

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BUY IRF3704Z https://www.utsource.net/itm/p/4568264.html
HEXFET Power MOSFET

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)	-	-	55	V
Gate-Source Voltage	V(GS)	-12	-	20	V
Continuous Drain Current	I(D)	-	4.3	-	A
Pulse Drain Current	I(DM)	-	16	-	A
Power Dissipation	P(TOT)	-	-	27	W
Junction Temperature	T(J)	-	-	150	掳C
Storage Temperature	T(STG)	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The IRF3704Z is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.

2. Mounting:

   • Ensure good thermal management by using heat sinks if necessary, especially when operating near maximum power dissipation levels.

3. Biasing:

   • Apply gate voltages within the specified limits to avoid damage or unreliable operation. The typical operating range for V(GS) is between 0V and 10V for optimal performance.

4. Current Limitation:

   • Do not exceed the continuous drain current rating of 4.3A or the pulse drain current rating of 16A to prevent overheating and potential failure.

5. Thermal Considerations:

   • Monitor the junction temperature to ensure it does not exceed 150掳C. Proper cooling mechanisms should be implemented in high-power applications.

6. Storage Conditions:

   • Store the device in a controlled environment where temperatures do not fall below -55掳C or rise above 150掳C.

7. Testing:

   • When testing the device, ensure all parameters are within the specified limits to avoid damaging the component.

(For reference only)