Details

---

BUY IXTQ50N20P https://www.utsource.net/itm/p/4587339.html
PolarHT Power MOSFET N-Channel Enhancement Mode

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V CES	Off-state, T J = 25掳C	-	-	200	V
Collector Current	I C	Continuous, T C = 25掳C	-	50	-	A
Power Dissipation	P TOT	T C = 25掳C	-	-	375	W
Junction Temperature	T J	Operating Range	-40	-	150	掳C
Storage Temperature	T STG		-55	-	150	掳C
Gate Charge	Q G	V GS = 卤15V, I D = 5A	-	65	-	nC
Input Capacitance	C ISS	V DS = 15V, f = 1 MHz	-	1800	-	pF

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation.
   • Handle with care to avoid damage to the pins and body.

2. Electrical Connections:

   • Connect the collector (C), emitter (E), and gate (G) terminals correctly according to your circuit design.
   • Ensure all connections are secure and insulated as necessary.

3. Operating Conditions:

   • Do not exceed the maximum ratings provided in the parameter table.
   • Operate within specified temperature ranges to ensure reliable performance.

4. Gate Drive:

   • Apply appropriate gate drive voltages to achieve optimal switching performance.
   • Keep gate resistance low enough to minimize switching losses but high enough to prevent oscillation.

5. Thermal Management:

   • Monitor junction temperature during operation to prevent overheating.
   • Use thermal interface materials between the device and heatsink for efficient heat transfer.

6. Storage:

   • Store in a dry, cool place within the specified storage temperature range.
   • Protect from electrostatic discharge (ESD) by using proper packaging and handling procedures.

(For reference only)