Details

---

BUY IXGH6N170A https://www.utsource.net/itm/p/4587994.html
Voltage IGBT

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V CES		-	1700	-	V
Emitter-Collector Voltage	V ECS		-	1700	-	V
Gate-Emitter Voltage	V GES		-15	0	15	V
Continuous Collector Current	I C	T C = 25掳C	-	6	-	A
		T C = 100掳C	-	4.2	-	A
Pulse Collector Current	I CM	T C = 25掳C, t w = 10 渭s	-	36	-	A
Power Dissipation	P T	T C = 25掳C	-	210	-	W
		T C = 100掳C	-	110	-	W
Junction Temperature	T J		-	-	150	掳C
Storage Temperature	T STG		-55	-	150	掳C

Instructions for IXGH6N170A:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings specified in the table.
   • Use proper heat sinks when operating at high power levels to ensure junction temperature does not exceed 150掳C.

2. Mounting and Assembly:

   • Ensure good thermal contact with a heat sink if necessary.
   • Follow manufacturer guidelines for mounting torque and procedures.

3. Biasing and Operation:

   • Apply gate-emitter voltage within the specified limits (-15V to +15V).
   • Keep collector current within continuous and pulse ratings based on operating temperature.

4. Storage and Environment:

   • Store in a dry environment within the storage temperature range of -55掳C to 150掳C.
   • Protect from electrostatic discharge (ESD) during handling.

5. Testing:

   • Refer to datasheet for detailed test conditions and parameters.
   • Perform testing under controlled environments to avoid damage.

For more detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)