Details

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BUY MB3769APF-G-BND-JN https://www.utsource.net/itm/p/4656081.html

Parameter	Description	Value	Unit
Part Number	Full part number	MB3769APF-G-BND-JN	-
Type	Device type	MOSFET	-
Package	Package type	DPAK (TO-252)	-
Drain-Source Voltage	Maximum drain-source voltage	60	V
Continuous Drain	Continuous drain current at 25掳C	18	A
Power Dissipation	Maximum power dissipation	3.4	W
RDS(on)	On-resistance at 25掳C, VGS=10V	0.018	惟
Gate Charge	Total gate charge	12	nC
Operating Temperature	Junction temperature range	-55 to 150	掳C
Storage Temperature	Storage temperature range	-55 to 150	掳C

Instructions for Use:

1. Handling Precautions: Handle the device with care to avoid damage to the pins and package. Use appropriate anti-static measures.
2. Mounting: Ensure proper alignment of the device during mounting to prevent mechanical stress on the leads. Follow manufacturer guidelines for soldering profiles.
3. Electrical Connections: Verify that all electrical connections are correct before applying power. Ensure that the maximum ratings are not exceeded.
4. Thermal Management: Adequate heat sinking is recommended for applications where the device operates near its maximum power dissipation.
5. Testing: Perform initial testing under controlled conditions to ensure the device operates within specified parameters.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat. Observe the storage temperature limits provided.

For detailed specifications and application notes, refer to the datasheet provided by the manufacturer.

(For reference only)