Details

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BUY M25P16VMN6TP https://www.utsource.net/itm/p/4826293.html
512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MH or 50 MH SPI Bus Interface

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	Vcc	Operating	2.7		3.6	V
Standby Current	ISB	Vcc = 3.0V		1		渭A
Active Current	IAV	Vcc = 3.0V		5		mA
Programming Current	IPGM	Vcc = 3.0V		4		mA
Erase Time	TERS	Sector Erase		300		ms
Page Program Time	TPYPG	Page Program		2		ms
Read Access Time	TRAC	Byte/Word/Page		55		ns
Data Retention			20			Years

Instructions for M25P16VMN6TP

1. Power Supply Requirements:

   • Ensure the supply voltage (Vcc) is within the operating range of 2.7V to 3.6V.

2. Initialization:

   • Apply the supply voltage and ensure the device is properly initialized before any read/write operations.

3. Read Operations:

   • Use the appropriate command sequence to read data from the memory. The access time should be considered to avoid data corruption.

4. Write Operations:

   • Before writing, check if the memory is ready by verifying the status register.
   • Use the page program command to write data. Each page program operation can take up to 2ms.

5. Erase Operations:

   • To erase a sector, use the sector erase command. Each sector erase can take up to 300ms.
   • Verify the status register after an erase operation to ensure completion.

6. Standby Mode:

   • When not in use, put the device into standby mode to minimize power consumption. The standby current is typically around 1渭A at 3.0V.

7. Data Retention:

   • The device guarantees data retention for up to 20 years under normal operating conditions.

8. Handling:

   • Handle with care to avoid electrostatic discharge (ESD) damage. Use proper ESD protection during handling and installation.

9. Environmental Conditions:

   • Ensure the device operates within specified temperature and humidity ranges to maintain reliability.

For detailed command sequences and timing diagrams, refer to the specific datasheet provided by the manufacturer.

(For reference only)