Details

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BUY M25P128-VME6G https://www.utsource.net/itm/p/4826345.html
128 Mbit (Multilevel), Low Voltage, Serial Flash Memory With 50MH SPI Bus Interface

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VCC	2.7	-	3.6	V	Operating voltage range
Standby Current	ISB	-	1	2	μA	Power-down mode current
Active Current	IAV	-	10	20	mA	Current in active mode
Programming Current	IPR	-	4	5	mA	Current during page programming
Erase Time	TEB	3	-	5	s	Sector/block erase time
Page Program Time	TPP	0.5	-	2	ms	Time to program a page
Read Cycle Time	TRC	25	-	40	ns	Time between read commands
Data Output Setup Time	tSO	0	-	10	ns	Data output setup time
Data Output Hold Time	tOH	0	-	10	ns	Data output hold time
Command Latch Cycle Time	TCS	0	-	20	ns	Time for command latch cycle
Address Latch Cycle Time	TAS	0	-	20	ns	Time for address latch cycle
Write Enable Setup Time	tSUW	0	-	20	ns	Write enable setup time
Write Enable Hold Time	tHOLDW	0	-	5	ns	Write enable hold time

Instructions:

1. Power Supply: Ensure the supply voltage (VCC) is within the specified range of 2.7V to 3.6V.
2. Initialization: Before any operation, initialize the device by applying the appropriate power and ensuring the chip select pin is high.
3. Programming: To program a page, apply the write enable command followed by the page program command. Ensure the programming current (IPR) does not exceed 5mA.
4. Erase Operations: For sector or block erasure, use the appropriate erase command. Wait for the specified erase time (TEB) before performing any other operations.
5. Read Operations: Execute read commands with proper timing parameters such as read cycle time (TRC), data output setup time (tSO), and data output hold time (tOH).
6. Timing Requirements: Adhere strictly to all timing requirements listed to ensure reliable operation, including command and address latch times (TCS, TAS), and write enable setup and hold times (tSUW, tHOLDW).

(For reference only)