Details

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BUY MAP5401M-QB-E5 https://www.utsource.net/itm/p/4838375.html

Parameter	Description
Part Number	MAP5401M-QB-E5
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Package Type	TO-263 (DPAK)
Polarity	N-Channel
Vds (Drain-Source Voltage)	55V (Maximum Drain-to-Source Voltage)
Id (Continuous Drain Current)	4.7A (Continuous Drain Current at 25掳C)
Rds(on) (On-Resistance)	0.018惟 (Max On-Resistance at Vgs=10V, Id=4.7A)
Power Dissipation	1.6W (Maximum Power Dissipation at Tc=25掳C)
Operating Temperature	-55掳C to +150掳C (Junction Operating Temperature Range)
Gate Charge	11nC (Typical Gate Charge at Vgs=10V)
Switching Characteristics	Optimized for high-speed switching applications

Instructions:

1. Handling Precautions: The MAP5401M-QB-E5 is sensitive to ESD (Electrostatic Discharge). Use appropriate ESD protection during handling and installation.
2. Mounting: Ensure proper heat dissipation by mounting on a heatsink if operating near maximum power dissipation.
3. Soldering: Follow standard soldering practices suitable for surface mount devices (SMD). Avoid excessive heat during soldering to prevent damage.
4. Storage: Store in a dry environment to prevent corrosion or oxidation.
5. Testing: Before incorporating into a circuit, test the device for shorts or opens using an appropriate tester.
6. Application Notes: For detailed application notes and design considerations, refer to the manufacturer's datasheet or technical support.

For more detailed specifications and further information, please consult the official datasheet provided by the manufacturer.

(For reference only)