Details

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BUY MT28F400B5SG-8B https://www.utsource.net/itm/p/4839225.html

Parameter	Description	Value/Range
Device Type	NAND Flash Memory	3V, 1Gb (128M x 8)
Package Type	BGA	67-Ball
Operating Voltage (Vcc)	Supply Voltage	2.7V to 3.6V
I/O Voltage (VccIO)	I/O Supply Voltage	1.7V to 3.6V
Temperature Range	Operating Temperature	-40掳C to +85掳C
Data Retention	Data Retention Time	10 years at 25掳C
Endurance	Program/Erase Cycles	100,000 cycles
Page Size	Page Size	2K bytes
Block Size	Block Size	128 pages
Array Size	Total Array Size	1Gb
Access Time (tR)	Random Read Access Time	50ns
Program Time	Page Program Time	Max 200渭s
Erase Time	Block Erase Time	Max 2ms
Standby Current	Standby Current	< 10渭A
Active Current	Active Current	< 40mA

Instructions:

1. Power-Up Sequence: Ensure that Vcc and VccIO are within the specified operating voltage ranges before applying any signals.
2. Initialization: After power-up, wait for the Ready/Busy signal to indicate that the device is ready for commands.
3. Command Execution: Use the command set as defined in the datasheet to perform read, write, and erase operations.
4. Error Handling: Monitor the status register for error flags during operation and handle accordingly.
5. Power-Down: Before powering down, ensure all operations are completed and the device is in a stable state.
6. Handling: Follow standard ESD precautions when handling the device to avoid damage.

(For reference only)