Details

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BUY MT48LC4M32B2TG-7:G https://www.utsource.net/itm/p/4906728.html
IC DRAM 128M PARALLEL 86TSOP II

Parameter	Description	Value
Device Type	Type of memory device	SDRAM
Organization	Memory organization	4M x 32 bits
Package	Package type	56-TSOP II
Supply Voltage (Vcc)	Operating supply voltage range	2.5V 卤 0.1V
Clock Frequency (tCK)	Maximum clock frequency	133 MHz
CAS Latency (CL)	CAS latency	CL=2
Access Time (tRCD)	Row to column delay	2 cycles
Row Precharge Time (tRP)	Row precharge time	2 cycles
Refresh Cycle Time (tRFC)	Refresh cycle time	70 ns
Row Active to Row Active Delay (tRRD)	Row active to row active delay	2 cycles
Write Recovery Time (tWR)	Write recovery time	2 cycles
Exit Self-Refresh to Active Command Time (tXSR)	Exit self-refresh to active command time	70 ns
Self-Refresh Entry/Exit Time (tSR)	Self-refresh entry/exit time	70 ns
Power Down Exit Time (tXP)	Power down exit time	12 ns
Operating Temperature Range	Operating temperature range	-40掳C to +85掳C
Storage Temperature Range	Storage temperature range	-55掳C to +125掳C

Instructions for Use:

1. Power Supply: Ensure that the supply voltage (Vcc) is within the specified range of 2.5V 卤 0.1V.
2. Clock Configuration: Configure the clock frequency up to a maximum of 133 MHz, ensuring stability at this speed.
3. Timing Parameters: Adhere strictly to the timing parameters such as CAS latency (CL=2), access time (tRCD), and others to maintain proper operation.
4. Refresh Management: Implement refresh cycles every 70ns to prevent data loss.
5. Thermal Considerations: Operate within the specified temperature ranges to avoid damage or malfunction.
6. Handling: Handle with care to avoid electrostatic discharge (ESD) damage; use appropriate ESD protection measures.
7. Installation: Ensure correct orientation and seating in the TSOP II package socket during installation.

(For reference only)