Details

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BUY NAND512W3A2DN6 https://www.utsource.net/itm/p/4925509.html

Parameter	Description
Device Type	NAND Flash Memory
Density	512Mb (64MB)
Organization	8K Pages x 2048 + 64 Bytes
Interface	Toggle Mode DDR Interface
Vcc Supply Voltage	1.8V 卤 0.1V
I/O Voltage	1.8V 卤 0.1V
Operating Temperature Range	-40掳C to +85掳C
Package Type	WSON-32 (9x7mm)
Data Retention	10 years at 25掳C
Endurance	Up to 100,000 Program/Erase Cycles

Instructions for Use

1. Power Supply Connection: Ensure that the Vcc and I/O voltages are set correctly at 1.8V. Improper voltage can lead to device malfunction or damage.

2. Initialization: Before performing any read/write operations, initialize the device by sending the reset command followed by setting up the necessary configuration registers.

3. Read/Write Operations: Use the appropriate commands for reading from and writing to the memory pages. Be aware of the ECC (Error Correction Code) requirements as specified in the datasheet.

4. Erase Operations: Erase operations must be performed on entire blocks. Ensure no write operation is attempted on a page before it has been erased.

5. Handling: Handle with care to avoid static damage. Follow ESD (Electrostatic Discharge) precautions.

6. Storage Conditions: Store the device in recommended environmental conditions to ensure long-term reliability.

7. Programming: Refer to the specific programming guidelines provided in the detailed datasheet for optimal performance and reliability.

For more detailed information, refer to the manufacturer's datasheet or technical documentation.

(For reference only)