Details

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BUY NTF3055-100T3G https://www.utsource.net/itm/p/4954200.html
Power MOSFET 3.0 Amps 60 Volts N−Channel

Parameter	Description	Value
Part Number	Device identifier	NTF3055-100T3G
Type	Component type	N-channel MOSFET
Package	Encapsulation	TO-220
VDS (Drain-Source Volt)	Maximum Drain-Source Voltage	55V
VGS (Gate-Source Volt)	Maximum Gate-Source Voltage	卤20V
ID (Continuous Current)	Continuous Drain Current at 25掳C	68A
RDS(on)	On-State Resistance at VGS = 10V	3.7 m惟
Power Dissipation	Maximum Power Dissipation at Tc = 25掳C	175W
Junction Temperature	Operating Junction Temperature Range	-55掳C to +150掳C
Storage Temperature	Storage Temperature Range	-65掳C to +175掳C

Instructions for Use:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat dissipation by mounting on a suitable heatsink if operating near maximum power dissipation.
3. Biasing: Apply gate voltages within the specified range to avoid damage to the device. Exceeding the maximum VGS can cause immediate failure.
4. Current Handling: Do not exceed the continuous drain current ratings, especially in high ambient temperature environments.
5. Testing: When testing or measuring parameters, ensure that all conditions match those specified in the datasheet for accurate results.
6. Soldering: Follow standard soldering practices for through-hole components. Avoid excessive heat during soldering to prevent damage.

For detailed application notes and more specific instructions, refer to the manufacturer's datasheet or technical documentation.

(For reference only)