Details

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BUY NTGD4161PT1G https://www.utsource.net/itm/p/4955942.html
Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 卤10V, ID = 4A	-	1.6	-	m惟
Gate Charge	QG	VGS = 卤5V	-	23	-	nC
Input Capacitance	Ciss	VDS = 10V, f = 1MHz	-	790	-	pF
Output Capacitance	Coss	VDS = 10V, f = 1MHz	-	260	-	pF
Reverse Transfer Capacitance	Crss	VDS = 10V, f = 1MHz	-	530	-	pF
Continuous Drain Current	ID	TC = 25掳C	-	4.8	-	A
Pulse Drain Current	IDM	TP = 10ms, TC = 25掳C	-	12	-	A
Gate-Source Voltage	VGS	-	-10	-	10	V
Drain-Source Breakdown Voltage	BVDSS	IG = 250渭A	-	60	-	V

Instructions for NTGD4161PT1G:

1. Handling and Storage:

   • Store in a dry, cool place.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking if operating at high currents or power levels.
   • Use recommended soldering profiles to avoid thermal stress.

3. Electrical Connections:

   • Verify that gate drive voltages do not exceed VGS ratings.
   • Connect the drain and source leads correctly to avoid short circuits.

4. Operational Guidelines:

   • Operate within specified temperature and voltage limits.
   • Monitor junction temperature to ensure it remains within safe operational limits.

5. Testing:

   • Perform initial testing under controlled conditions to validate performance parameters.
   • Use appropriate test equipment calibrated to industry standards.

(For reference only)