Details

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BUY PTFB182503EL https://www.utsource.net/itm/p/5024768.html
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805-1880 MHz

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Forward Voltage	Vf	-	1.8	2.2	V	If = 20mA
Reverse Current	Ir	-	100	500	nA	Vr = 5V
Peak Forward Current	If(s)	-	-	100	mA	t = 10ms
Operating Temperature	Topr	-40	-	85	掳C
Storage Temperature	Tstg	-40	-	100	掳C
Wavelength	位D	620	625	630	nm	If = 20mA
Viewing Angle	胃	20	30	40	掳
Luminous Intensity	Iv	100	200	300	mcd	If = 20mA

Instructions:

1. Handling and Storage: Store in a dry, cool place within the specified storage temperature range. Avoid exposure to excessive humidity and direct sunlight.
2. Mounting: Ensure proper orientation during mounting. The component is sensitive to polarity; incorrect installation can lead to damage.
3. Current Limitation: Do not exceed the peak forward current (If(s)) for more than the specified duration to prevent overheating and potential failure.
4. Temperature Considerations: Operate within the recommended operating temperature range to ensure optimal performance and longevity.
5. Electrical Connections: Verify all electrical connections are secure and correct before applying power. Use appropriate current-limiting resistors if necessary.
6. Environmental Protection: Protect from harsh environments including dust, moisture, and corrosive gases. Use suitable encapsulation or protective coatings as needed.

(For reference only)