RSR020N06TL

RSR020N06TL


Specifications
SKU
5066482
Details

BUY RSR020N06TL https://www.utsource.net/itm/p/5066482.html
MOSFET N-CH 60V 2A TSMT6
Parameter Symbol Conditions Min Typ Max Unit
Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 4.0A 20
Gate-Source Voltage VGS(th) ID = 1mA 1.0 2.5 V
Drain Current ID VGS = 10V, Tc = 25°C 4.0 A
Power Dissipation PD TC = 25°C 0.32 W
Junction Temperature TJ Operating Range -55 150 °C
Storage Temperature TSTG -65 150 °C

Instructions for RSR020N06TL

  1. Handling Precautions:

    • Use proper ESD (Electrostatic Discharge) precautions when handling the device to prevent damage.
    • Avoid exposing the component to excessive heat or moisture.
  2. Mounting and Soldering:

    • Ensure that the soldering temperature does not exceed the maximum junction temperature of the device.
    • Allow sufficient cooling time post-soldering to avoid thermal shock.
  3. Operating Conditions:

    • Operate within specified voltage and current limits to ensure reliable performance.
    • Maintain the junction temperature within the operational range to prevent overheating.
  4. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in original packaging until ready for use to protect against static damage.
  5. Testing:

    • Test the device parameters periodically to ensure they remain within specified limits.
    • Use calibrated equipment for accurate testing results.
(For reference only)

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