Details
BUY RSR020N06TL https://www.utsource.net/itm/p/5066482.html
MOSFET N-CH 60V 2A TSMT6
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 4.0A | 20 | mΩ | ||
Gate-Source Voltage | VGS(th) | ID = 1mA | 1.0 | 2.5 | V | |
Drain Current | ID | VGS = 10V, Tc = 25°C | 4.0 | A | ||
Power Dissipation | PD | TC = 25°C | 0.32 | W | ||
Junction Temperature | TJ | Operating Range | -55 | 150 | °C | |
Storage Temperature | TSTG | -65 | 150 | °C |
Instructions for RSR020N06TL
Handling Precautions:
- Use proper ESD (Electrostatic Discharge) precautions when handling the device to prevent damage.
- Avoid exposing the component to excessive heat or moisture.
Mounting and Soldering:
- Ensure that the soldering temperature does not exceed the maximum junction temperature of the device.
- Allow sufficient cooling time post-soldering to avoid thermal shock.
Operating Conditions:
- Operate within specified voltage and current limits to ensure reliable performance.
- Maintain the junction temperature within the operational range to prevent overheating.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in original packaging until ready for use to protect against static damage.
Testing:
- Test the device parameters periodically to ensure they remain within specified limits.
- Use calibrated equipment for accurate testing results.
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