Details

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BUY SI7898DP-T1-GE3 https://www.utsource.net/itm/p/5133907.html
MOSFET N-CH 150V 3A PPAK 8SOIC

Parameter	Description
Part Number	SI7898DP-T1-GE3
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
Package Type	TO-252 (DPAK)
Drain Source Voltage	60V
Continuous Drain Current	40A (at 25掳C case temperature)
Rds(on)	4.5 m惟 (max at Vgs=10V, Id=20A)
Gate Charge	45 nC
Power Dissipation	31W (at 25掳C ambient temperature)
Operating Temperature Range	-55掳C to +175掳C
Storage Temperature Range	-65掳C to +150掳C
Mounting Type	Surface Mount

Instructions for Use:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Thermal Management: Ensure adequate heat sinking to manage the power dissipation especially when operating near maximum current levels.
3. Voltage Ratings: Do not exceed the maximum drain-source voltage (Vds) of 60V to prevent damage to the device.
4. Current Limitations: The continuous drain current should not exceed 40A at a case temperature of 25掳C. For higher temperatures, derate accordingly.
5. Gate Drive: Ensure that the gate drive voltage is within the specified range to avoid excessive Rds(on) or potential damage.
6. PCB Layout: Optimize PCB layout for low inductance paths between the source and ground connections to enhance performance and reliability.
7. Soldering: Follow recommended soldering profiles to avoid thermal stress on the component during assembly.

(For reference only)