Details
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N-Channel 30-V (D-S) MOSFET
| Parameter | Description | Value |
|---|---|---|
| Part Number | Full part identifier | SI2306BDS-T1-GE3 |
| Type | Type of device | N-Channel MOSFET |
| Package | Package type | TO-252 (DPAK) |
| Vds (Max Drain-Source Voltage) | Maximum voltage between drain and source | 60V |
| Vgs (Gate-Source Voltage) | Voltage between gate and source | 卤20V |
| Rds(on) (Drain-Source On-Resistance) | Resistance when fully on at specified conditions | 4.5 m惟 @ Vgs = 10V, Id = 8A |
| Id (Continuous Drain Current) | Continuous current through the drain | 19A @ Tc = 25掳C |
| Pd (Power Dissipation) | Maximum power dissipation | 2.7W @ Tc = 25掳C |
| Operating Temperature Range | Operating temperature range | -55掳C to +150掳C |
| Storage Temperature Range | Storage temperature range | -65掳C to +150掳C |
Instructions for Use:
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe procedures.
- Mounting: Ensure proper thermal management by mounting on a heatsink if operating near maximum power dissipation.
- Biasing: Apply gate-source voltage within the specified limits to avoid damage.
- Operation: Do not exceed the maximum ratings for voltage, current, and power dissipation.
- Testing: Verify all connections are secure before applying power. Use appropriate test equipment settings.
- Storage: Store in original packaging in a dry environment to prevent moisture damage.
For detailed specifications and application notes, refer to the manufacturer's datasheet.
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