Details

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BUY SI2306BDS-T1-GE3 https://www.utsource.net/itm/p/5137564.html
N-Channel 30-V (D-S) MOSFET

Parameter	Description	Value
Part Number	Full part identifier	SI2306BDS-T1-GE3
Type	Type of device	N-Channel MOSFET
Package	Package type	TO-252 (DPAK)
Vds (Max Drain-Source Voltage)	Maximum voltage between drain and source	60V
Vgs (Gate-Source Voltage)	Voltage between gate and source	±20V
Rds(on) (Drain-Source On-Resistance)	Resistance when fully on at specified conditions	4.5 mΩ @ Vgs = 10V, Id = 8A
Id (Continuous Drain Current)	Continuous current through the drain	19A @ Tc = 25°C
Pd (Power Dissipation)	Maximum power dissipation	2.7W @ Tc = 25°C
Operating Temperature Range	Operating temperature range	-55°C to +150°C
Storage Temperature Range	Storage temperature range	-65°C to +150°C

Instructions for Use:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe procedures.
2. Mounting: Ensure proper thermal management by mounting on a heatsink if operating near maximum power dissipation.
3. Biasing: Apply gate-source voltage within the specified limits to avoid damage.
4. Operation: Do not exceed the maximum ratings for voltage, current, and power dissipation.
5. Testing: Verify all connections are secure before applying power. Use appropriate test equipment settings.
6. Storage: Store in original packaging in a dry environment to prevent moisture damage.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)