Details

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BUY SI7884BDP-T1-E3 https://www.utsource.net/itm/p/5138397.html
N-Channel 40-V (D-S) MOSFET

Parameter	Description	Value	Unit
Part Number	Device identifier	SI7884BDP-T1-E3	-
Package Type	Type of packaging	MLP-5 3x3	-
Operating Voltage	Supply voltage range	2.7 to 5.5	V
Continuous Current	Maximum continuous current through the device	3	A
Peak Current	Maximum peak current through the device	6	A
RDS(on) @ 4.5V	On-state resistance at 4.5V	2.9	mΩ
RDS(on) @ 2.7V	On-state resistance at 2.7V	3.8	mΩ
Gate Charge	Total gate charge	16	nC
Power Dissipation	Maximum power dissipation	1.4	W
Junction Temperature	Maximum operating junction temperature	-40 to 125	°C
Storage Temperature	Temperature range for storage	-40 to 150	°C

Instructions:

1. Power Supply: Ensure that the supply voltage is within the specified operating voltage range (2.7V to 5.5V).
2. Current Handling: Do not exceed the continuous current rating of 3A or the peak current rating of 6A.
3. Thermal Management: Keep the junction temperature within the specified range (-40°C to 125°C). Use appropriate heatsinking if necessary.
4. Installation: Handle with care during installation to avoid damage to the MLP-5 3x3 package.
5. Gate Drive: Ensure sufficient gate drive to minimize switching losses and achieve optimal performance, considering the gate charge of 16nC.
6. Storage Conditions: Store in a dry environment within the temperature range of -40°C to 150°C.

For detailed application notes and more specific guidelines, refer to the datasheet provided by Siliconix/Vishay.

(For reference only)