Details

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BUY STP30NS15LFP https://www.utsource.net/itm/p/5219274.html
N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH OVERLAY? POWER MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	5.0	-	m惟	VGS = 10V, ID = 30A
Continuous Drain Current	ID	-	-	30	A	TC = 25掳C
Pulse Drain Current	Ipp	-	-	180	A	tpp = 10渭s, TPW = 10ms, TC = 25掳C
Gate Threshold Voltage	VGS(th)	1.0	1.7	2.4	V	ID = 1mA
Input Capacitance	Ciss	-	980	-	pF	VDS = 15V, f = 1MHz
Output Capacitance	Coss	-	65	-	pF	VDS = 15V, f = 1MHz
Total Gate Charge	Qg	-	25	-	nC	VGS = 10V, VDS = 15V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain the junction temperature within safe operating limits.
   • Handle with care to avoid damage to the leads and package.

2. Biasing:

   • Apply gate voltage (VGS) carefully to ensure it is within the specified range to prevent damage or excessive on-state resistance.

3. Current Limitations:

   • Do not exceed the continuous drain current (ID) rating at any temperature.
   • For pulse applications, ensure that pulse duration and repetition rate comply with the specified pulse current (Ipp) conditions.

4. Thermal Considerations:

   • Monitor the device temperature to stay within the maximum allowable junction temperature.
   • Use adequate cooling methods if necessary.

5. Capacitance and Switching:

   • Be aware of input (Ciss), output (Coss), and reverse transfer capacitances as they affect switching performance.
   • Design the circuit considering total gate charge (Qg) for optimal switching characteristics.

6. Storage and Operation:

   • Store in a dry environment to prevent moisture ingress.
   • Operate within the specified environmental conditions to ensure reliability.

For detailed specifications and further instructions, refer to the official datasheet provided by STMicroelectronics.

(For reference only)