Details
BUY TC55VCM416BTGN55 https://www.utsource.net/itm/p/5255175.html
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
Parameter | Description | Value | Unit |
---|---|---|---|
Product Name | High-Speed CMOS Static RAM | TC55VCM416BTGN55 | - |
Organization | Organization of Memory | 1,048,576 x 4 bits | - |
Supply Voltage (VCC) | Operating Supply Voltage | 3.3 | V |
Supply Voltage (VIO) | I/O Supply Voltage | 1.65 to 3.6 | V |
Access Time | Random Access Time | 10 | ns |
Cycle Time | Minimum Cycle Time | 10 | ns |
Output Enable | Output Enable Time | 4 | ns |
Package Type | Package Type | TFBGA | - |
Number of Pins | Number of Pins | 48 | - |
Operating Temperature | Operating Temperature Range | -40 to +85 | °C |
Storage Temperature | Storage Temperature Range | -65 to +150 | °C |
Data Retention | Data Retention at Maximum Operating Temperature | 10 years | - |
Instructions for Use:
- Power Supply Connection: Ensure that the supply voltage (VCC) is set to 3.3V and I/O supply voltage (VIO) is within the range of 1.65V to 3.6V.
- Signal Timing: Adhere to the specified access time and cycle time requirements to ensure reliable data read/write operations.
- Environmental Conditions: Operate the device within the specified temperature ranges to avoid damage or malfunction.
- Handling Precautions: Handle the TFBGA package with care to prevent physical damage to pins and solder joints.
- Storage: Store the device in a controlled environment within the storage temperature range to maintain its integrity over long periods.
- Data Integrity: For optimal data retention, operate the device within recommended temperature and voltage parameters.
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