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Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Supply Voltage | VCC | 4.5 | 5.5 | V | ||
Operating Temperature | TOPR | -40 | 85 | °C | ||
Storage Temperature | TSTG | -65 | 150 | °C | ||
Input Voltage Range | VIN | 0 | VCC | V | ||
Output Voltage Range | VOUT | 0 | VCC | V | ||
Quiescent Current | IQ | VIN = VCC | 200 | μA | ||
Maximum Load Current | ILOAD | Per Channel | 30 | mA | ||
Propagation Delay | tpd | 10 | 20 | ns | ||
Power Dissipation | PD | 700 | mW |
Instructions for Use:
- Power Supply: Ensure the supply voltage (VCC) is within the specified range of 4.5V to 5.5V.
- Temperature Considerations: Operate the device within the temperature range of -40°C to 85°C for optimal performance.
- Input and Output Voltages: The input and output voltages should not exceed the supply voltage (VCC).
- Current Limits: Do not exceed the maximum load current per channel, which is 30mA.
- Propagation Delay: Account for a propagation delay between 10ns and 20ns in timing-sensitive applications.
- Power Management: Monitor power dissipation to ensure it does not exceed 700mW to prevent overheating.
For detailed application notes and specific circuit configurations, refer to the manufacturer's datasheet.
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