Details

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BUY VS-10MQ040NTRPBF https://www.utsource.net/itm/p/5381316.html

Parameter	Description
Part Number	VS-10MQ040NTRPBF
Type	MOSFET - Metal Oxide Semiconductor Field Effect Transistor
Package Type	TO-252 (DPAK)
Polarity	N-Channel
Drain Source Voltage	100 V
Continuous Drain Current	40 A (at Ta = 25掳C), 36 A (at Tc = 25掳C)
RDS(on)	4.0 m惟 (at VGS = 10 V, ID = 27 A)
Gate Charge	89 nC
Input Capacitance	1590 pF
Total Power Dissipation	15 W (at Ta = 25掳C), 48 W (at Tc = 25掳C)
Operating Temperature Range	-55掳C to +150掳C
Storage Temperature Range	-65掳C to +175掳C
Mounting Type	Surface Mount

Instructions:

1. Handling Precautions: Use proper anti-static precautions when handling the device to prevent damage from electrostatic discharge.
2. Soldering: Ensure that soldering temperature does not exceed the maximum junction temperature of the device. Follow recommended reflow profiles for surface mount components.
3. Heat Sinks: For applications requiring high current or power dissipation, consider using heat sinks or other cooling methods to maintain operating temperatures within specified limits.
4. Circuit Design: Ensure that the circuit design accounts for the continuous drain current and voltage ratings to avoid overstress conditions.
5. Storage: Store in a dry environment within the specified storage temperature range to prevent degradation of electrical characteristics.
6. Installation: Verify correct orientation during installation to prevent short circuits or incorrect connections.

(For reference only)