ZXMHN6A07T8TA

ZXMHN6A07T8TA


Specifications
SKU
5426709
Details

BUY ZXMHN6A07T8TA https://www.utsource.net/itm/p/5426709.html
60V N-CHANNEL MOSFET H-BRIDGE
Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDSS 600 V Maximum drain-source voltage
Gate-Source Voltage VGS -10 10 V Maximum gate-source voltage
Continuous Drain Current ID 7 A Continuous drain current at TC = 25°C
Pulse Drain Current Ipp 45 A Pulse drain current (t < 10 μs)
Total Power Dissipation PD 80 W Maximum total power dissipation at TC = 25°C
Junction Temperature Tj -55 150 °C Operating junction temperature range
Storage Temperature Tstg -55 150 °C Storage temperature range
Gate Charge Qg 90 nC Total gate charge
Input Capacitance Ciss 3300 pF Input capacitance at VDS = 10 V, VGS = 0 V
Output Capacitance Coss 100 pF Output capacitance at VDS = 10 V, ID = 0 mA
Reverse Transfer Capacitance Crss 100 pF Reverse transfer capacitance at VDS = 10 V, VGS = 0 V

Instructions for Use:

  1. Voltage and Current Limits:

    • Ensure that the drain-source voltage (VDSS) does not exceed 600V.
    • Keep the gate-source voltage (VGS) within ±10V to prevent damage.
    • Do not exceed the continuous drain current (ID) of 7A or pulse drain current (Ipp) of 45A for short pulses.
  2. Power Dissipation:

    • The device can dissipate up to 80W of power at a case temperature (TC) of 25°C. Ensure adequate heat sinking if operating near this limit.
  3. Temperature Considerations:

    • Operate the device within the specified junction temperature range (-55°C to 150°C).
    • Store the device in environments where the temperature remains between -55°C and 150°C.
  4. Capacitance Parameters:

    • Be aware of the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) values for circuit design considerations.
  5. Gate Drive Requirements:

    • Account for the total gate charge (Qg) when designing the gate drive circuitry to ensure proper switching performance.
  6. Handling Precautions:

    • Handle with care to avoid static damage. Follow ESD handling procedures.
    • Ensure all connections are secure and correct to prevent electrical overstress or short circuits.
  7. Application Notes:

    • Refer to the manufacturer’s application notes for detailed guidelines on optimal use in specific applications.
(For reference only)

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