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BUY ZXMHN6A07T8TA https://www.utsource.net/itm/p/5426709.html
60V N-CHANNEL MOSFET H-BRIDGE
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | Maximum drain-source voltage | ||
| Gate-Source Voltage | VGS | -10 | 10 | V | Maximum gate-source voltage | |
| Continuous Drain Current | ID | 7 | A | Continuous drain current at TC = 25°C | ||
| Pulse Drain Current | Ipp | 45 | A | Pulse drain current (t < 10 μs) | ||
| Total Power Dissipation | PD | 80 | W | Maximum total power dissipation at TC = 25°C | ||
| Junction Temperature | Tj | -55 | 150 | °C | Operating junction temperature range | |
| Storage Temperature | Tstg | -55 | 150 | °C | Storage temperature range | |
| Gate Charge | Qg | 90 | nC | Total gate charge | ||
| Input Capacitance | Ciss | 3300 | pF | Input capacitance at VDS = 10 V, VGS = 0 V | ||
| Output Capacitance | Coss | 100 | pF | Output capacitance at VDS = 10 V, ID = 0 mA | ||
| Reverse Transfer Capacitance | Crss | 100 | pF | Reverse transfer capacitance at VDS = 10 V, VGS = 0 V |
Instructions for Use:
Voltage and Current Limits:
- Ensure that the drain-source voltage (VDSS) does not exceed 600V.
- Keep the gate-source voltage (VGS) within ±10V to prevent damage.
- Do not exceed the continuous drain current (ID) of 7A or pulse drain current (Ipp) of 45A for short pulses.
Power Dissipation:
- The device can dissipate up to 80W of power at a case temperature (TC) of 25°C. Ensure adequate heat sinking if operating near this limit.
Temperature Considerations:
- Operate the device within the specified junction temperature range (-55°C to 150°C).
- Store the device in environments where the temperature remains between -55°C and 150°C.
Capacitance Parameters:
- Be aware of the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) values for circuit design considerations.
Gate Drive Requirements:
- Account for the total gate charge (Qg) when designing the gate drive circuitry to ensure proper switching performance.
Handling Precautions:
- Handle with care to avoid static damage. Follow ESD handling procedures.
- Ensure all connections are secure and correct to prevent electrical overstress or short circuits.
Application Notes:
- Refer to the manufacturer’s application notes for detailed guidelines on optimal use in specific applications.
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