Details

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BUY JS28F128P33TF70A https://www.utsource.net/itm/p/5444035.html
128-Mbit, 64-Mbit Single Bit per Cell (SBC)

Parameter	Description	Value
Device	High-density, low-power flash memory	JS28F128P33TF70A
Memory Size	Total Memory	128 Mbit (16 MByte)
Organization	Organization	1,048,576 words x 16-bit
Supply Voltage (Vcc)	Operating voltage	3.0 V to 3.6 V
Operating Temperature	Industrial temperature range	-40°C to +85°C
Package	Package type	TFBGA-48
Access Time	Typical access time	70 ns
Power Consumption	Active current	90 mA (typical)
Standby Current	Standby current	1 μA (typical)
Programming Voltage	Programming voltage	3.0 V to 3.6 V
Erase Time	Sector/block erase time	1 s (max)
Write Time	Page program time	1 ms (max)
Endurance	Write/erase cycles	100,000 cycles
Data Retention	Data retention life	20 years

Instructions:

1. Power Supply Connection: Connect the device to a power supply within the specified operating voltage range of 3.0 V to 3.6 V.
2. Temperature Considerations: Ensure the device operates within the industrial temperature range of -40°C to +85°C.
3. Initialization: Before performing any read or write operations, initialize the device according to the manufacturer’s guidelines.
4. Read Operations: To read data from the memory, apply the appropriate address and control signals as specified in the datasheet.
5. Write Operations: For programming, ensure the programming voltage is within the specified range and follow the timing requirements for page programming (up to 1 ms).
6. Erase Operations: Perform sector or block erases following the maximum erase time of 1 second.
7. Power Management: When not in use, put the device into standby mode to minimize power consumption.
8. Handling Precautions: Handle the device with care to avoid electrostatic discharge (ESD) damage, which can occur if proper precautions are not taken.

For detailed information on specific commands and timing diagrams, refer to the official datasheet provided by the manufacturer.

(For reference only)