Details

---

BUY IRFP150M https://www.utsource.net/itm/p/5525954.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-source on-resistance	Rds(on)	-	0.18	-	惟	@ Vgs = 10V, Id = 25A
Gate-source threshold voltage	Vgs(th)	2.0	-	4.0	V	@ Id = 250渭A
Continuous drain current	Id	-	50	-	A	@ Tc = 25掳C
Pulse drain current	Idp	-	100	-	A	@ Tc = 25掳C, t = 10ms
Power dissipation	Pd	-	200	-	W	@ Tc = 25掳C
Junction temperature	Tj	-	-	175	掳C	Maximum operating temperature
Storage temperature range	Tstg	-55	-	150	掳C	Operating and storage temperature range

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings to prevent damage.
   • Use proper heat sinking for applications involving high power dissipation.

2. Mounting:

   • Ensure good thermal contact between the device and the heatsink.
   • Tighten the mounting screws to the recommended torque specified by the manufacturer.

3. Biasing:

   • Apply gate-source voltage (Vgs) within the specified threshold limits to avoid improper conduction or damage.
   • For optimal performance, maintain Vgs at or above the typical threshold voltage during operation.

4. Protection:

   • Incorporate protection circuits like flyback diodes in switching applications to safeguard against transient voltages.
   • Consider using gate resistors to control switching speed and reduce electromagnetic interference (EMI).

5. Testing:

   • Verify that all connections are secure and correct before applying power.
   • Perform initial testing with reduced input voltages/currents to ensure proper operation.

6. Storage:

   • Store in a dry, cool environment away from direct sunlight and corrosive substances.
   • Handle with care to avoid mechanical damage.

(For reference only)