Details

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Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V(DS)	-	-	100	V
Gate-Source Voltage	V(GS)	-20		20	V
Continuous Drain Current	I(D)	-	-	48	A	Tc = 25掳C
Pulse Drain Current	I(D pul)	-	-	96	A	tp = 10 渭s, Tc = 25掳C
Power Dissipation	P(TOT)	-	-	130	W	TC = 25掳C
Junction Temperature	T(j)	-	-	175	掳C
Total Gate Charge	Q(G)	-	80	-	nC	VGS = 10V
Input Capacitance	Ciss	-	1550	-	pF	VDS = 25V
Output Capacitance	Coss	-	250	-	pF	VDS = 25V
Reverse Transfer Capacitance	Crss	-	380	-	pF	VDS = 25V
RDS(on)	RDS(on)	-	3.0	-	m惟	VGS = 10V, ID = 28A
Threshold Voltage	VGS(th)	2.0	3.0	4.0	V	ID = 250 渭A

Instructions for Use:

1. Operating Conditions: Ensure that the operating conditions do not exceed the maximum ratings listed in the table to prevent damage to the device.
2. Heat Dissipation: For applications requiring high power dissipation, use appropriate heat sinks or cooling methods to maintain the junction temperature within specified limits.
3. Gate Drive: The gate should be driven with a voltage between the minimum and maximum gate-source voltage (V(GS)) to ensure proper operation. Avoid exceeding these limits to prevent potential latch-up or damage.
4. Pulse Operation: When using the device in pulse mode, ensure that the pulse duration does not exceed the specified limits to avoid overheating.
5. Capacitance Considerations: Account for the input, output, and reverse transfer capacitances when designing circuits to minimize switching losses and ensure stable operation.
6. Storage and Handling: Store the device in a dry environment and handle with care to avoid electrostatic discharge (ESD) damage. Use ESD protection measures during handling and installation.

(For reference only)