Details

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BUY AUIRF2804S-7P https://www.utsource.net/itm/p/5801349.html
HEXFET? Power MOSFET

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Continuous Drain Current	ID	Tc = 25掳C	-	40	-	A
Pulse Drain Current	Ibm	tp = 10 渭s, Rep.	-	160	-	A
Gate-Source Voltage	VGS(th)	ID = 250 渭A	2.0	-	4.0	V
Breakdown Voltage	BVdss	ID = 1 mA	55	-	60	V
Total Gate Charge	Qg	VGS = 卤15 V	-	37	-	nC
Input Capacitance	Ciss	VDS = 15 V	-	1400	-	pF
Output Capacitance	Coff	VDS = 15 V	-	490	-	pF
Reverse Transfer Capacitance	Crss	VDS = 15 V	-	480	-	pF
On-State Resistance	RDS(on)	VGS = 10 V	-	0.016	-	惟

Instructions for Use:

1. Handling and Storage:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid damaging the leads.

2. Mounting:

   • Ensure proper heat sinking if operating at high currents.
   • Follow manufacturer guidelines for PCB layout to minimize stray inductance.

3. Electrical Connections:

   • Verify that all connections are secure and correct.
   • Ensure gate drive voltage is within specified limits to avoid damage.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Monitor temperature and ensure adequate cooling to prevent overheating.

5. Testing:

   • Use appropriate test equipment to verify performance parameters.
   • Perform tests under controlled conditions to ensure accuracy.

6. Safety:

   • Always disconnect power before making adjustments or repairs.
   • Follow all safety guidelines provided by the manufacturer.

(For reference only)