IXGH17N100U1

IXGH17N100U1


Specifications
SKU
5971959
Details

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Low VCE(sat) IGBT with Diode High speed IGBT with Diode
Parameter Symbol Value Unit Conditions/Notes
Maximum Drain-Source Voltage VDSS 1000 V
Maximum Gate-Source Voltage VGS 卤20 V
Continuous Drain Current ID 17 A TC = 25掳C
Pulse Drain Current IGM 43 A tp = 10 渭s, TC = 25掳C
Total Power Dissipation PD 180 W TC = 25掳C
Junction Temperature Tj -55 to 150 掳C
Storage Temperature Range Tstg -55 to 150 掳C
Gate Charge QG 96 nC VGS = 卤15V, ID = 17A
Input Capacitance Ciss 2420 pF VDS = 500V, f = 1 MHz
Output Capacitance Coss 255 pF VDS = 500V, f = 1 MHz
Reverse Transfer Capacitance Crss 218 pF VDS = 500V, f = 1 MHz
Threshold Voltage VGS(th) 2.0 to 4.0 V ID = 250 渭A, TC = 25掳C
On-State Resistance RDS(on) 0.85 VGS = 15V, ID = 17A

Instructions for Use:

  1. Mounting and Handling: Ensure proper handling during installation to avoid damage to the device. Use appropriate mounting techniques to ensure good thermal contact with the heat sink.
  2. Voltage Ratings: Do not exceed the maximum drain-source voltage (VDSS) or gate-source voltage (VGS). Exceeding these ratings can lead to permanent damage.
  3. Current Limits: Operate within the specified continuous and pulse current limits. Excessive current can cause overheating and failure.
  4. Thermal Management: Monitor the junction temperature (Tj) to ensure it stays within the operational range. Use adequate cooling methods if necessary.
  5. Capacitance Considerations: Account for input (Ciss), output (Coss), and reverse transfer capacitances (Crss) in circuit design to minimize switching losses.
  6. Gate Drive Requirements: Provide sufficient gate drive voltage (VGS) to ensure the MOSFET operates in its linear region when required. Be mindful of the threshold voltage (VGS(th)) for reliable operation.
  7. Storage Conditions: Store the device in a controlled environment within the specified storage temperature range (Tstg) to prevent degradation.
  8. Electrostatic Discharge (ESD) Protection: Handle the device with ESD precautions to avoid damage from static electricity.

For detailed specifications and further instructions, refer to the manufacturer's datasheet.

(For reference only)

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