Details

---

BUY RSD050N10 https://www.utsource.net/itm/p/6032908.html
4V Drive Nch MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDSS			100	V
Gate-Source Voltage	VGS	-20		20	V
Continuous Drain Current	ID		5.0		A	Tc = 25掳C
Pulse Drain Current	IDM		36		A	tp = 10 渭s
R DS(on) at V GS=10V	RDS(on)	4.0			m惟	ID = 5A
Input Capacitance	Ciss		240		pF	VDS = 20V
Output Capacitance	Coss		65		pF	VDS = 20V
Reverse Transfer Capacitance	Crss		40		pF	VDS = 20V

Instructions for Use:

1. Voltage Handling: Ensure the drain-source voltage (VDSS) does not exceed 100V to prevent damage.
2. Current Management: Operate within the continuous drain current (ID) limits, which is up to 5.0A at a case temperature of 25掳C. For pulse conditions, ensure the pulse duration does not exceed 10 渭s when using the maximum pulse drain current (IDM).
3. Gate Control: The gate-source voltage (VGS) should be maintained between -20V and +20V to avoid potential breakdown or damage.
4. Thermal Considerations: Pay attention to the thermal management of the device, especially when operating near the maximum continuous drain current.
5. Capacitance Awareness: Be aware of the input (Ciss), output (Coss), and reverse transfer capacitances (Crss) as they can affect switching performance and speed.
6. On-State Resistance: Monitor the on-state resistance (RDS(on)) under operating conditions to ensure efficient operation and minimal power loss.

For detailed specifications and further information, refer to the datasheet provided by the manufacturer.

(For reference only)