Details
BUY SI7852DP-T1-GE3 https://www.utsource.net/itm/p/6345615.html
N-Channel 80-V (D-S) MOSFET
| Parameter | Description |
|---|---|
| Part Number | SI7852DP-T1-GE3 |
| Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Configuration | N-Channel |
| VDS (Max Drain-Source Voltage) | 卤60V |
| RDS(on) (Typical On-State Resistance) | 4.5 m惟 @ VGS = 10V, ID = 30A |
| ID (Continuous Drain Current) | 30A @ TC = 25掳C |
| Power Dissipation (PD) | 29W @ TC = 25掳C |
| Total Gate Charge (Qg) | 110 nC |
| Package Type | TO-220FP (TO-220 Flanged Plastic) |
| Operating Temperature Range | -55掳C to +175掳C |
| Mounting Type | Through Hole |
| RoHS Compliant | Yes |
Instructions for Use:
- Handling Precautions: The SI7852DP-T1-GE3 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
- Heat Sinking: Given the high power dissipation capability, ensure adequate heat sinking to maintain optimal operating temperatures.
- Voltage and Current Ratings: Do not exceed the maximum ratings for VDS, IDS, and PD to avoid damage to the device.
- Gate Drive Requirements: Ensure that the gate drive circuitry can provide sufficient voltage and current to switch the MOSFET on and off efficiently.
- Storage Conditions: Store in a dry, cool environment away from direct sunlight and corrosive materials.
- Installation: Follow standard practices for through-hole component installation, ensuring correct orientation and soldering temperature profiles to avoid thermal shock.
For detailed application-specific guidelines and more comprehensive data, refer to the manufacturer's datasheet or contact technical support.
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