Details

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BUY IXGH40N30 https://www.utsource.net/itm/p/6378374.html
HiPerFAST IGBT

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDSS	-	-	300	V	Maximum drain-source voltage
Gate-Source Voltage	VGS	-15	-	15	V	Maximum gate-source voltage
Continuous Drain Current	ID	-	40	-	A	Continuous drain current at Tc=25掳C
Pulse Drain Current	Ipp	-	160	-	A	Pulse drain current (t=10渭s, Tc=25掳C)
Power Dissipation	PD	-	-	210	W	Total power dissipation at Tc=25掳C
Junction Temperature	TJ	-55	-	175	掳C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	175	掳C	Storage temperature range

Instructions for Use:

1. Installation and Handling:

   • Handle the IXGH40N30 with care to avoid damage to the leads and body.
   • Ensure proper heat sinking if operating near maximum current or power ratings.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly according to your circuit design.
   • Ensure that the gate drive circuitry is capable of providing sufficient voltage levels within the specified VGS range.

3. Operating Conditions:

   • Do not exceed the maximum ratings for VDSS, VGS, ID, and PD to prevent device failure.
   • Monitor the junction temperature (TJ) to ensure it remains within the operational limits.

4. Storage and Environmental Considerations:

   • Store in a dry environment within the specified storage temperature range.
   • Protect from electrostatic discharge (ESD) which can damage sensitive components.

5. Testing and Troubleshooting:

   • Perform initial testing under controlled conditions to validate performance parameters.
   • Refer to the datasheet for detailed troubleshooting and specific application notes.

(For reference only)